Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103462
Reference12 articles.
1. Liquid phase epitaxial Ga1-xInxAsySb1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range
2. Continuous-wave lasing at room temperature in InGaSbAs/GaAlSbAs injection heterostructures emitting in the spectral range 2.2–2.4 μm
3. Lasers And Avalanche Photodiodes For IR Fiber Optics In The 2-2,5 µm Spectral Range
4. Lasers And Avalanche Photodiodes For IR Fiber Optics In The 2-2,5 µm Spectral Range
5. Room‐temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy
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3. AlxGa1–xSb Crystals Grown by a Modified Stepanov Technique with an Ultrasonic Effect;Crystal Growth & Design;2019-04-04
4. Strain- and kinetically induced suppression of phase separation in MBE-grown metastable and unstable GaInAsSb quaternary alloys for mid-infrared optoelectronics;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-05
5. GaSb/AlGaSb COMPOUND SEMICONDUCTORS GROWN BY MOCVD FOR OPTOELECTRONIC APPLICATIONS;Journal of Nonlinear Optical Physics & Materials;2006-09
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