Г-L intervalley separation and electron mobility in GaAsSb grown on InP: Transport comparison with the GaInAs and GaInAsSb alloys
Author:
Affiliation:
1. Millimeter-Wave Electronics Group, ETH-Zürich, Gloriastrasse 35, CH-8092 Zürich, Switzerland
Funder
Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0060423
Reference48 articles.
1. Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy
2. Band gaps and band offsets in strained GaAs1−ySby on InP grown by metalorganic chemical vapor deposition
3. InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs
4. Demonstration of high-speed staggered lineup GaAsSb-InP unitraveling carrier photodiodes
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