Abstract
Abstract
The semiconductor alloy GaAsSb is commonly found in many types of semiconductor devices, ranging from high electron mobility transistors to solar cells. Yet, surprisingly little is known about its transport properties. Here, we theoretically determine the high field transport properties of electrons and holes in the alloy GaAs0.51Sb0.49 that is lattice matched to InP and, in particular, is used in a great many of these types of semiconductor devices.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献