Characteristics of strained GaAs1−ySby (0.16 ≤ y ≤ 0.69) quantum wells on InP substrates-Reference-Cited by-同舟云学术

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Characteristics of strained GaAs1−ySby (0.16 ≤ y ≤ 0.69) quantum wells on InP substrates

Published:2007-11-30 Issue:24 Volume:40 Page:7656-7661
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Huang J Y T,Xu D P,Park J H,Mawst L J,Kuech T F,Song X,Babcock S E,Vurgaftman I,Meyer J R

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/40/i=24/a=010/pdf

Reference24 articles.

1. 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V

2. Material studies regarding InP-based high-efficiency solar cells

3. InP-based dilute-nitride mid-infrared type-II “W” quantum-well lasers

4. Demonstration of high-speed staggered lineup GaAsSb-InP unitraveling carrier photodiodes

5. Light-emitting diodes and laser diodes based on a Ga1−xInxAs/GaAs1−ySby type II superlattice on InP substrate

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1. High-speed InP-based heterojunction bipolar transistors;Reference Module in Materials Science and Materials Engineering;2023

2. Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP (0 0 1) substrates;Journal of Crystal Growth;2021-02

3. Mixed Semiconductor Alloys for Optical Devices;Annual Review of Chemical and Biomolecular Engineering;2013-06-07

4. Synthesis and electron transfer property of sulfhydryl-containing multi-walled carbon nanotube/gold nanoparticle heterojunctions;Journal of Physics D: Applied Physics;2009-01-21

5. MOVPE growth of antimonide-containing alloy materials for long wavelength applications;Journal of Crystal Growth;2008-11

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