MOVPE growth of antimonide-containing alloy materials for long wavelength applications-Reference-Cited by-同舟云学术

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MOVPE growth of antimonide-containing alloy materials for long wavelength applications

Published:2008-11 Issue:23 Volume:310 Page:4826-4830
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kuech T.F.,Khandekar A.A.,Rathi M.,Mawst L.J.,Huang J.Y.T.,Song Xueyan,Babcock S.E.,Meyer J.R.,Vurgaftman I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference56 articles.

1. Ternary and quaternary antimonide devices for thermophotovoltaic applications

2. Phase Separation on GaInAsSb Films for Thermophotovoltaic Devices

3. The physics and technology of gallium antimonide: An emerging optoelectronic material

4. The growth of antimonides by MOVPE

5. The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials

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1. Performance of 1 eV GaNAsSb-based photovoltaic cell on Si substrate at different growth temperatures;Progress in Photovoltaics: Research and Applications;2017-02-01

2. Temperature-Dependent X-ray Diffraction Measurements of Infrared Superlattices Grown by MBE;Crystals;2016-11-17

3. Metal Organic Vapor Phase Epitaxy Chemical Kinetics;Handbook of Crystal Growth;2015

4. Metamorphic Ga0.76In0.24As/GaAs0.75Sb0.25 tunnel junctions grown on GaAs substrates;Journal of Applied Physics;2014-08-21

5. Mixed Semiconductor Alloys for Optical Devices;Annual Review of Chemical and Biomolecular Engineering;2013-06-07

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