Formation of interface layers in GaxIn1−xAs/InP heterostructures: A re‐evaluation using ultrathin quantum wells as a probe
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356385
Reference33 articles.
1. Strain effects on GaxIn1−xAs/InP single quantum wells grown by organometallic vapor‐phase epitaxy with 0≤x≤1
2. Single‐monolayer quantum wells of GaInAs in InP grown by metalorganic vapor phase epitaxy
3. Temperature resolved photoluminescence investigations on InGaAs/InP MQWs
4. Influence of the gas switching sequence on the optical properties of ultrathin InGaAs/InP quantum wells
5. Influence of arsenic adsorption layers on heterointerfaces in GaInAs/InP quantum well structures
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2. Interface analysis on MOVPE grown InP–GaInAs–InP double heterostructures for application in infrared solar cells;Solar Energy Materials and Solar Cells;2016-04
3. Ultra-thin in InAlP/InGaAs heterojunctins grown by metal-organic vapor-phase epitaxy;2009 IEEE International Conference on Indium Phosphide & Related Materials;2009-05
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