Influence of arsenic adsorption layers on heterointerfaces in GaInAs/InP quantum well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108529
Reference11 articles.
1. Strain effects on GaxIn1−xAs/InP single quantum wells grown by organometallic vapor‐phase epitaxy with 0≤x≤1
2. Single‐monolayer quantum wells of GaInAs in InP grown by metalorganic vapor phase epitaxy
3. Temperature resolved photoluminescence investigations on InGaAs/InP MQWs
4. Influence of the gas switching sequence on the optical properties of ultrathin InGaAs/InP quantum wells
5. Photoluminescence study of carrier collection and recombination in thin GaInAs/InP single quantum wells
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