Photoluminescence study of carrier collection and recombination in thin GaInAs/InP single quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343660
Reference53 articles.
1. Atomic steps in thin GaInAs/lnP quantum‐well structures grown by organometallic vapor phase epitaxy
2. Growth of Ga0.47In0.53As‐InP quantum wells by low pressure metalorganic chemical vapor deposition
3. Optical investigation of MQW system InP–InGaAs–InP
4. Quantum well structures of In0.53Ga0.47As/InP grown by hydride vapor phase epitaxy in a multiple chamber reactor
5. Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm
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3. Monolithic integration of AlGaInP laser diodes on SiGe∕Si substrates by molecular beam epitaxy;Journal of Applied Physics;2006-07
4. Photoluminescence of compressively strained AlGaInP/GaInP quantum well structures grown by MOCVD;Journal of Crystal Growth;2004-06
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