Photoluminescence of compressively strained AlGaInP/GaInP quantum well structures grown by MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Low current and highly reliable operation at 80°C of 650 nm 5 mW LDs for DVD applications
2. Effects of strained‐layer structures on the threshold current density of AlGaInP/GaInP visible lasers
3. Low threshold current density (760 A/cm2) and high power (45 mW) operation of strained Ga0.42In0.58P multiquantum well laser diodes emitting at 632 nm
4. Very low threshold current AlGaInp/GaxIn1−xP strained single quantum well visible laser diode
5. Analysis of GaInP/AlGaInP compressive strained multiple-quantum-well laser
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1. Self-regulation of light emission of an AlGaInP quantum well diode;Optics Letters;2023-04-07
2. Optimization of the Number of Quantum Well Pairs for High-Brightness AlGaInP-Based Light Emitting Diodes;Journal of Nanoscience and Nanotechnology;2011-02-01
3. Realization of the 700 nm Emitting Spectrum Using GaInP Quantum Dots in the AlGaInP-Based Light Emitting Diodes;Journal of The Electrochemical Society;2010
4. Temperature dependences of photoluminescence and electroluminescence spectra in light-emitting diodes;Applied Physics Letters;2009-06-29
5. Effect of Si doping on the photoluminescence properties of AlGaInP/GaInP multiple quantum wells;Microelectronics Journal;2007-06
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