Low current and highly reliable operation at 80°C of 650 nm 5 mW LDs for DVD applications
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19990011?crawler=true&mimetype=application/pdf
Reference4 articles.
1. Highly reliable operation at 80°C for 650 nm 5 mW AlGaInP LDs
2. 30-mW 690-nm high-power strained-quantum-well AlGaInP laser
3. Low-threshold-current 670 nm multiquantum-well laser diodes
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1. Low gain threshold density of a single InGaP quantum well sandwiched by digital alloy;Current Applied Physics;2014-09
2. Investigation of Strained Multi-Quantum Well Structures for High Bright AlGaInP-Based Light Emitting Diodes;Japanese Journal of Applied Physics;2009-07-21
3. Numerical study on lateral mode behavior of 660-nm InGaP/AlGaInP multiple-quantum-well laser diodes;Optical Review;2009-05
4. Self-consistent model of 650 nm GaInP/AlGaInP quantum-well vertical-cavity surface-emitting diode lasers;Semiconductor Science and Technology;2007-05-04
5. Optical characterization of digital alloy In0.49Ga0.51P∕In0.49(Ga0.6Al0.4)0.51P multi-quantum-wells grown by molecular beam epitaxy;Journal of Applied Physics;2006-11
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