Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94727
Reference15 articles.
1. 1.3‐μm wavelength GaInAsP/InP double heterostructure lasers grown by molecular beam epitaxy
2. 1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy
3. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures
4. Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular‐beam epitaxy
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1. Photoreflectance study of InP/InGaAs(1–5 ML)/InP single quantum well;Thin Solid Films;1998-12
2. Temperature Dependence of the Luminescence from GaInAs/InP Quantum Wells;Key Engineering Materials;1996-03
3. Quantum Well Heterostructure Lasers;VLSI Electronics Microstructure Science;1994
4. Intrinsic electron mobility in narrowGa0.47In0.53As quantum wells;Physical Review B;1993-12-15
5. Quantum-Well Semiconductor Lasers;Semiconductor Lasers;1993
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