A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface-Reference-Cited by-同舟云学术

A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface

Published:2022-02-20 Issue: Volume: Page:
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Container-title:2022 IEEE International Solid- State Circuits Conference (ISSCC)
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Author:

Yuh Jong¹,Li Jason¹,Li Heguang¹,Oyama Yoshihiro¹,Hsu Cynthia¹,Anantula Pradeep¹,Jeong Stanley¹,Amarnath Anirudh¹,Darne Siddhesh¹,Bhatia Sneha²,Tang Tianyu¹,Arya Aditya¹,Rastogi Naman¹,Ookuma Naoki¹,Mizukoshi Hiroyuki¹,Yap Alex¹,Wang Demin¹,Kim Steve¹,Wu Yonggang¹,Peng Min¹,Lu Jason¹,Ip Tommy¹,Malhotra Seema¹,Han David¹,Okumura Masatoshi¹,Liu Jiwen¹,Sohn John¹,Chibvongodze Hardwell¹,Balaga Muralikrishna¹,Matsuda Aki¹,Puri Chakshu¹,Chen Chen¹,V Indra K¹,G Chaitanya¹,Ramachandra Venky¹,Kato Yosuke¹,Kumar Ravi¹,Wang Huijuan¹,Moogat Farookh¹,Yoon In-Soo¹,Kanda Kazushige²,Shimizu Takahiro²,Shibata Noboru²,Shigeoka Takashi²,Yanagidaira Kosuke²,Kodama Takuyo²,Fukuda Ryo²,Hirashima Yasuhiro²,Abe Mitsuhiro²

Affiliation:

1. Western Digital,Milpitas,CA

2. KIOXIA,Tokyo,Japan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9731529/9731102/09731110.pdf?arnumber=9731110

Reference5 articles.

1. 13.1 A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology

2. A 1Tb 4b/Cell NAND Flash Memory with tPROG=2ms, tR=110?s and 1.2Gb/s High-Speed IO Rate;kim;ISSCC,0

3. 13.5 A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology

4. 13.2 A 1Tb 4b/Cell 96-Stacked-WL 3D NAND Flash Memory with 30MB/s Program Throughput Using Peripheral Circuit Under Memory Cell Array Technique

5. 30.2 A 1Tb 4b/Cell 144-Tier Floating-Gate 3D-NAND Flash Memory with 40MB/s Program Throughput and 13.8Gb/mm2 Bit Density

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