A 6.4-Gb/s/pin nand Flash Memory Multichip Package Employing a Frequency Multiplying Bridge Chip for Scalable Performance and Capacity Storage Systems
Author:
Affiliation:
1. Institute of Memory Technology Research and Development, Kioxia Corporation, Yokohama, Japan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/8011414/10359146/10472519.pdf?arnumber=10472519
Reference9 articles.
1. A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface
2. 13.5 A 128Gb 1b/Cell 96-Word-Line-Layer 3D Flash Memory to Improve Random Read Latency with tPROG=75µs and tR=4µs
3. 7.6 1GB/s 2Tb NAND flash multi-chip package with frequency-boosting interface chip
4. A 1.2V 1.33Gb/s/pin 8Tb NAND flash memory multi-chip package employing F-chip for low power and high performance storage applications
5. A 1.8-Gb/s/Pin 16-Tb NAND Flash Memory Multi-Chip Package With F-Chip for High-Performance and High-Capacity Storage
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