A 1.2V 1.33Gb/s/pin 8Tb NAND flash memory multi-chip package employing F-chip for low power and high performance storage applications-Reference-Cited by-同舟云学术

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A 1.2V 1.33Gb/s/pin 8Tb NAND flash memory multi-chip package employing F-chip for low power and high performance storage applications

Published:2017-06 Issue: Volume: Page:
ISSN:
Container-title:2017 Symposium on VLSI Circuits
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Author:

Kim Hyun-Jin,Choi Youngdon,Lee Jangwoo,Byun Jindo,Yu Seungwoo,Na Daehoon,Park Jungjune,Kim Kwangwon,Kavala Anil,Jo Youngmin,Kim Changbum,Kim Sunghoon,Kim Nahyun,Kim Jaehwan,Jung Bongkil,Lee Yena,Park Chanjin,Joo Hansung,Kim Kisung,Choi Yunhee,Kwak Pansuk,Kim Hyeonggon,Ihm Jeong-Don,Byeon Dae-Seok,Lee Jin-Yub,Park Ki-Tae,Kyung Kye-Hyun

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8000695/8008441/08008479.pdf?arnumber=8008479

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. RiF: Improving Read Performance of Modern SSDs Using an On-Die Early-Retry Engine;2024 IEEE International Symposium on High-Performance Computer Architecture (HPCA);2024-03-02

2. A wide-frequency and high-precision ZQ calibration circuit for NAND Flash memory;Microelectronics Journal;2024-01

3. A 6.4-Gb/s/pin nand Flash Memory Multichip Package Employing a Frequency Multiplying Bridge Chip for Scalable Performance and Capacity Storage Systems;IEEE Solid-State Circuits Letters;2024

4. An all-digital built-in-self-test scheme for duty cycle corrector with de-skew circuit in NAND Flash memory;Microelectronics Journal;2023-11

5. A wide-frequency all-digital duty cycle corrector with self-adaptive configurable delay chain;IEICE Electronics Express;2023

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