Funder
National Key Research and Development Program of China
Beijing Science and Technology Planning Project
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. A 1.2V 1.33Gb/s/pin 8Tb NAND flash memory multi-chip package employing F-chip for low power and high performance storage applications;Kim,2017
2. A 1.8-Gb/s/Pin 16-Tb NAND flash memory multi-chip package with F-chip for high-performance and high-capacity storage;Na;IEEE J. Solid-State Circuits,2021
3. A 1-Tb 4-b/cell 4-plane 162-layer 3-D flash memory with 2.4-Gb/s IO interface;Yuh;IEEE J. Solid-State Circuits,2023
4. Dual-loop two-step ZQ calibration for dynamic voltage–frequency scaling in LPDDR4 SDRAM;Lee;IEEE J. Solid-State Circuits,2018
5. A process tolerant semi-self impedance calibration method for LPDDR4 memory controller;Lee,2015