A 1-Tb 4-b/cell 4-Plane 162-Layer 3-D Flash Memory With 2.4-Gb/s IO Interface-Reference-Cited by-同舟云学术

A 1-Tb 4-b/cell 4-Plane 162-Layer 3-D Flash Memory With 2.4-Gb/s IO Interface

Published:2023-01 Issue:1 Volume:58 Page:316-328
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Yuh Jong Hak¹^ORCID,Li Yen-Lung Jason¹,Li Heguang¹,Oyama Yoshihiro¹,Hsu Cynthia¹,Anantula Pradeep¹,Jeong Gwang Yeong Stanley¹,Amarnath Anirudh¹,Darne Siddhesh¹,Bhatia Sneha¹,Tang Tianyu¹,Arya Aditya¹,Rastogi Naman¹,Ookuma Naoki¹,Mizukoshi Hiroyuki¹,Yap Alex¹,Wang Demin¹,Kim Steve¹,Wu Yonggang¹,Peng Min¹,Lu Jason¹,Ip Tommy¹,Malhotra Seema¹,Han Taekeun¹,Okumura Masatoshi¹,Liu Jiwen¹^ORCID,Sohn Jeongduk John¹,Chibvongodze Hardwell¹,Balaga Muralikrishna¹,Matsuda Akihiro¹,Chen Chen¹^ORCID,K. V. Indra¹,G. V. S. N. K. Chaitanya¹,Ramachandra Venky¹,Kato Yosuke¹,Kumar Ravi J.¹,Wang Huijuan¹,Moogat Farookh¹,Yoon In-Soo¹,Kanda Kazushige²,Shimizu Takahiro²,Shibata Noboru²,Yanagidaira Kosuke²,Kodama Takuyo²,Fukuda Ryo²,Hirashima Yasuhiro²,Abe Mitsuhiro²

Affiliation:

1. Western Digital, Milpitas, CA, USA

2. KIOXIA Corporation, Yokohama, Japan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/9999561/09855391.pdf?arnumber=9855391

Reference18 articles.

1. 13.2 A 1Tb 4b/Cell 96-Stacked-WL 3D NAND Flash Memory with 30MB/s Program Throughput Using Peripheral Circuit Under Memory Cell Array Technique

2. 30.2 A 1Tb 4b/cell 144-tier floating-gate 3D-NAND flash memory with 40MB/s program throughput and 13.8Gb/mm2 bit density;khakifirooz;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,2021

3. 13.1 A 1.33Tb 4-bit/cell 3D-flash memory on a 96-word-line-layer technology;shibata;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,2019

4. A 1Tb 4b/cell NAND flash memory with $\text{t}_{\textrm{PROG}}$ =2ms, $\text{t}_{\textrm{R}}$ =$110~\mu\text{s}$ and 1.2Gb/s high-speed IO rate;kim;IEEE ISSCC Dig Tech Papers,2020

5. 13.1 A 1.33Tb 4-bit/cell 3D-flash memory on a 96-word-line-layer technology;shibata;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,2019

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