A 1.8-Gb/s/Pin 16-Tb NAND Flash Memory Multi-Chip Package With F-Chip for High-Performance and High-Capacity Storage-Reference-Cited by-同舟云学术

A 1.8-Gb/s/Pin 16-Tb NAND Flash Memory Multi-Chip Package With F-Chip for High-Performance and High-Capacity Storage

Published:2021-04 Issue:4 Volume:56 Page:1129-1140
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Na Daehoon^ORCID,Lee Jang-woo,Lee Seon-Kyoo,Cho Hwasuk,Lee Junha,Yang Manjae,Song Eunjin,Kavala Anil,Kim Tongsung,Jang Dong-Su,Jo Youngmin,Shin Ji-Yeon,Chun Byung-Kwan,Lee Tae-sung,Jeong Byunghoon,Yoon Chi-Weon,Kang Dongku,Lee Seungjae,Ihm Jungdon,Byeon Dae Seok,Lee Jinyub,Song Jai Hyuk

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/9387173/09344818.pdf?arnumber=9344818

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3. A 6.4Gbps/pin NAND Flash Memory Multi-Chip Package Employing a Frequency Multiplying Bridge Chip for Scalable Performance and Capacity Storage Systems;2023 IEEE Asian Solid-State Circuits Conference (A-SSCC);2023-11-05

4. An all-digital built-in-self-test scheme for duty cycle corrector with de-skew circuit in NAND Flash memory;Microelectronics Journal;2023-11

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