13.5 A 128Gb 1b/Cell 96-Word-Line-Layer 3D Flash Memory to Improve Random Read Latency with tPROG=75µs and tR=4µs-Reference-Cited by-同舟云学术

13.5 A 128Gb 1b/Cell 96-Word-Line-Layer 3D Flash Memory to Improve Random Read Latency with tPROG=75µs and tR=4µs

Published:2020-02 Issue: Volume: Page:
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Container-title:2020 IEEE International Solid- State Circuits Conference - (ISSCC)
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Author:

Kouchi Toshiyuki,Kumazaki Noriyasu,Yamaoka Masashi,Bushnaq Sanad,Kodama Takuyo,Ishizaki Yuki,Deguchi Yoko,Sugahara Akio,Imamoto Akihiro,Asaoka Norichika,Isomura Ryosuke,Handa Takaya,Sato Junichi,Komai Hiromitsu,Okuyama Atsushi,Kanagawa Naoaki,Kajiyama Yasufumi,Terada Yuri,Ohnishi Hidekazu,Yabe Hiroki,Hsu Cynthia,Kakoi Mami,Yoshihara Masahiro

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9046640/9062887/09063154.pdf?arnumber=9063154

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