Comparing the Reliability of Solid-State Drives Based on TLC and QLC NAND Flash Memories (Invited)
Author:
Affiliation:
1. Solidigm,Data Center Engineering,Rancho Cordova,United States of America
2. Solidigm,Data Center Engineering,Shanghai,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529487.pdf?arnumber=10529487
Reference35 articles.
1. Reliability of Solid-State Drives Based on NAND Flash Memory
2. Scaling Trends in NAND Flash
3. 28.2 A High-Performance 1Tb 3b/Cell 3D-NAND Flash with a 194MB/s Write Throughput on over 300 Layers $\mathsf{i}$
4. A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-NAND Technology and Featuring a 23.3Gb/mm2 Bit Density
5. A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface
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