28.2 A High-Performance 1Tb 3b/Cell 3D-NAND Flash with a 194MB/s Write Throughput on over 300 Layers $\mathsf{i}$-Reference-Cited by-同舟云学术

28.2 A High-Performance 1Tb 3b/Cell 3D-NAND Flash with a 194MB/s Write Throughput on over 300 Layers $\mathsf{i}$

Published:2023-02-19 Issue: Volume: Page:
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Container-title:2023 IEEE International Solid- State Circuits Conference (ISSCC)
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Author:

Kim Bvunarvul¹,Lee Seungpil¹,Hah Beomseok¹,Park Kanawoo¹,Park Yongsoon¹,Jo Kangwook¹,Noh Yujong¹,Seol Hyeoncheon¹,Lee Hyunsoo¹,Shin Jaehyeon¹,Choi Seongjin¹,Jung Youngdon¹,Ahn Sungho¹,Park Yonghun¹,Oh Sujeong¹,Kim Myungsu¹,Kim Seonauk¹,Park Hyunwook¹,Lee Taeho¹,Won Haeun¹,Kim Minsung¹,Koo Cheulhee¹,Choi Yeonjoo¹,Choi Suyoung¹,Park Sechun¹,Youn Dongkyu¹,Lim Junyoun¹,Park Wonsun¹,Hur Hwang¹,Kwean Kichang¹,Choi Hongsok¹,Jeong Woopyo¹,Chung Sungyong¹,Choi Jungdal¹,Cha Seonyong¹

Affiliation:

1. SK hynix Semiconductor,Icheon,Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10067248/10067251/10067666.pdf?arnumber=10067666

Reference4 articles.

1. Quality-of-Service Implications of Enhanced Program Algorithms for Charge-Trapping NAND in Future Solid-State Drives

2. Investigation of the programming accuracy of a double-verify ISPP algorithm for nanoscale NAND Flash memories

3. 11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology

4. A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface

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