A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface-Reference-Cited by-同舟云学术

A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface

Published:2022-02-20 Issue: Volume: Page:
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Container-title:2022 IEEE International Solid- State Circuits Conference (ISSCC)
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Author:

Kim Moosung¹,Yun Sung Won¹,Park Jungjune¹,Park Hyun Kook¹,Lee Jungyu¹,Kim Yeong Seon¹,Na Daehoon¹,Choi Sara¹,Song Youngsun¹,Lee Jonghoon¹,Yoon Hyunjun¹,Lee Kangbin¹,Jeong Byunghoon¹,Kim Sanglok¹,Park Junhong¹,Lee Cheon An¹,Lee Jaeyun¹,Lee Jisang¹,Chun Jin Young¹,Jang Joonsuc¹,Yang Younghwi¹,Moon Seung Hyun¹,Choi Myunghoon¹,Kim Wontae¹,Kim Jungsoo¹,Yoon Seokmin¹,Kwak Pansuk¹,Lee Myunghun¹,Song Raehyun¹,Kim Sunghoon¹,Yoon Chiweon¹,Kang Dongku¹,Lee Jin-Yub¹,Song Jaihyuk¹

Affiliation:

1. Samsung Electronics,Hwaseong,Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9731529/9731102/09731640.pdf?arnumber=9731640

Reference4 articles.

1. 7.7 A 768Gb 3b/cell 3D-floating-gate NAND flash memory

2. A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology

3. 13.4 A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface

4. 30.3 A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface

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