7.7 A 768Gb 3b/cell 3D-floating-gate NAND flash memory-Reference-Cited by-同舟云学术

7.7 A 768Gb 3b/cell 3D-floating-gate NAND flash memory

Published:2016-01 Issue: Volume: Page:
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Container-title:2016 IEEE International Solid-State Circuits Conference (ISSCC)
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Author:

Tanaka Tomoharu,Helm Mark,Vali Tommaso,Ghodsi Ramin,Kawai Koichi,Park Jae-Kwan,Yamada Shigekazu,Pan Feng,Einaga Yuichi,Ghalam Ali,Tanzawa Toru,Guo Jason,Ichikawa Takaaki,Yu Erwin,Tamada Satoru,Manabe Tetsuji,Kishimoto Jiro,Oikawa Yoko,Takashima Yasuhiro,Kuge Hidehiko,Morooka Midori,Mohammadzadeh Ali,Kang Jong,Tsai Jeff,Sirizotti Emanuele,Lee Eric,Vu Luyen,Liu Yuxing,Choi Hoon,Cheon Kwonsu,Song Daesik,Shin Daniel,Yun Jung Hee,Piccardi Michele,Chan Kim-Fung,Luthra Yogesh,Srinivasan Dheeraj,Deshmukh Srinivasarao,Kavalipurapu Kalyan,Nguyen Dan,Gallo Girolamo,Ramprasad Sumant,Luo Michelle,Tang Qiang,Incarnati Michele,Macerola Agostino,Pilolli Luigi,De Santis Luca,Rossini Massimo,Moschiano Violante,Santin Giovanni,Tronca Bernardino,Lee Hyunseok,Patel Vipul,Pekny Ted,Yip Aaron,Prabhu Naveen,Sule Purval,Bemalkhedkar Trupti,Upadhyayula Kiranmayee,Jaramillo Camila

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7405163/7417881/7417947.pdf?arnumber=7417947

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