30.3 A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface-Reference-Cited by-同舟云学术

30.3 A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface

Published:2021-02-13 Issue: Volume: Page:
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Container-title:2021 IEEE International Solid- State Circuits Conference (ISSCC)
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Author:

Cho Jiho,Kang D. Chris,Park Jongyeol,Nam Sang-Wan,Song Jung-Ho,Jung Bong-Kil,Lyu Jaedoeg,Lee Hogil,Kim Won-Tae,Jeon Hongsoo,Kim Sunghoon,Kim In-Mo,Son Jae-Ick,Kang Kyoungtae,Shim Sang-Won,Park JongChul,Lee Eungsuk,Kang Kyung-Min,Park Sang-Won,Lee Jaeyun,Moon Seung Hyun,Kwak Pansuk,Jeong ByungHoon,Lee Cheon An,Kim Kisung,Ko Junyoung,Kwon Tae-Hong,Lee Junha,Lee Yohan,Kim Chaehoon,Lee Myeong-Woo,Yun Jeong-yun,Lee HoJun,Choi Yonghyuk,Hong Sanggi,Park JongHoon,Shin Yoonsung,Kim Hojoon,Kim Hansol,Yoon Chiweon,Byeon Dae Seok,Lee Seungjae,Lee Jin-Yub,Song Jaihyuk

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9365732/9365735/09366054.pdf?arnumber=9366054

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