Efficacy of Π-Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

Efficacy of Π-Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

Published:2023-05 Issue:5 Volume:70 Page:2612-2615
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Sehra Khushwant¹^ORCID,Chanchal ¹^ORCID,Anand Anupama¹^ORCID,Kumari Vandana²,Reeta ³,Gupta Mridula¹^ORCID,Mishra Meena³,Rawal D. S.³,Saxena Manoj⁴^ORCID

Affiliation:

1. Department of Electronic Science, University of Delhi South Campus, New Delhi, India

2. Department of Electronics, Maharaja Agrasen College, University of Delhi, New Delhi, India

3. Solid State Physics Laboratory, Defense Research and Development Organization, New Delhi, India

4. Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, New Delhi, India

Funder

Defence Research and Development Organization (DRDO) Solid State Physics Laboratory (SSPL) Contract for Acquisition of Research Services

Department of Science and Technology-Science and Engineering Research Board

Delhi University (DU) Institution of Eminence

Department of Biotechnology (DBT) Star Scheme at Deen Dayal Upadhyaya College (DDUC), DU

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10106527/10091877.pdf?arnumber=10091877

Reference19 articles.

1. Impact of heavy ion particle strike induced single event transients on conventional and π – Gate AlGaN/GaN HEMTs

2. Effect of different layer structures on the RF performance of GaN HEMT devices

3. A Π-shaped p-GaN HEMT for reliable enhancement mode operation

4. Suitability of thin-GaN for AlGaN/GaN HEMT material and device

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