Impact of heavy ion particle strike induced single event transients on conventional and π – Gate AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

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Impact of heavy ion particle strike induced single event transients on conventional and π – Gate AlGaN/GaN HEMTs

Published:2021-01-13 Issue: Volume: Page:
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Sehra Khushwant^ORCID,Kumari Vandana,Gupta Mridula^ORCID,Mishra Meena,Rawal D. S.,Saxena Manoj^ORCID

Funder

Solid State Physics Laboratory (SSPL), Defence Research & Development Organization

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1088/1361-6641/abdba3/pdf

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigating single-event effects in recess gate GaN/AlN p-channel HEMTs for radiation-hardened application;Journal of Computational Electronics;2024-08-19

2. Assessing single event upset susceptibility of InAlN HEMT with cap layer under heavy-ion environment;Microsystem Technologies;2024-07-25

3. On the Single-Event Burnout Performance of a GaN HEMT With Sunken Source-Connected Field Plate Architecture;IEEE Transactions on Electron Devices;2024-07

4. Improvement of single event transients effect for a novel AlGaN/GaN HEMT with enhanced breakdown voltage;Journal of Science: Advanced Materials and Devices;2024-06

5. Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor;Applied Physics Letters;2024-04-22

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