Investigating single-event effects in recess gate GaN/AlN p-channel HEMTs for radiation-hardened application
Author:
Funder
DST-SERB
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s10825-024-02216-y.pdf
Reference30 articles.
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3. Chen, et al.: Observation of hole accumulation at the interface of an undoped InGaN/GaN heterostructure. Appl. Phys. Lett. (2009). https://doi.org/10.1063/1.3176443
4. Neuburger, et al.: The role of charge dipoles in GaN HFET design. Physica status solidi (c) 1, 86–89 (2003). https://doi.org/10.1002/pssc.200390123
5. Zhang, et al.: Polarization-induced 2D hole gases in Pseudomorphic undoped GaN/AlN heterostructures on single-crystal AlN substrates. Appl. Phys. Lett. (2021). https://doi.org/10.1063/5.0066072
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