Polarization-induced 2D hole gases in pseudomorphic undoped GaN/AlN heterostructures on single-crystal AlN substrates-Reference-Cited by-同舟云学术

Polarization-induced 2D hole gases in pseudomorphic undoped GaN/AlN heterostructures on single-crystal AlN substrates

Published:2021-10-18 Issue:16 Volume:119 Page:162104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Zexuan¹^ORCID,Encomendero Jimy¹^ORCID,Chaudhuri Reet¹^ORCID,Cho Yongjin¹^ORCID,Protasenko Vladimir¹,Nomoto Kazuki¹,Lee Kevin¹^ORCID,Toita Masato²,Xing Huili Grace¹³⁴^ORCID,Jena Debdeep¹³⁴^ORCID

Affiliation:

1. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA

2. Advanced Devices Technology Center, Asahi Kasei Corporation, Hibiya Mitsui Tower, 1-1-2 Yurakucho, Chiyoda-ku, Tokyo 100-8440, Japan

3. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA

4. Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA

Funder

Asahi Kasei Corporation

National Science Foundation

U.S. Department of Energy

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0066072

Reference34 articles.

1. K. Nomoto , R. Chaudhuri , S. Bader , L. Li , A. Hickman , S. Huang , H. Lee , T. Maeda , H. Then , M. Radosavljevic et al., in IEEE International Electron Devices Meeting (IEDM) ( IEEE, 2020), pp. 8–3.

2. Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas

3. A polarization-induced 2D hole gas in undoped gallium nitride quantum wells

4. An Experimental Demonstration of GaN CMOS Technology

5. Regrowth-Free GaN-Based Complementary Logic on a Si Substrate

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