The Role of Charge Dipoles in GaN HFET Design-Reference-Cited by-同舟云学术

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The Role of Charge Dipoles in GaN HFET Design

Published:2002-12-19 Issue:1 Volume: Page:86-89
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Neuburger M.¹,Daumiller I.¹,Kunze M.¹,Zimmermann T.¹,Jogai B.²,van Nostrand J.²,Sewell J.²,Jenkins T.²,Dadgar A.³,Krost A.³,Kohn E.¹

Affiliation:

1. Department of Electron Devices & Circuits, University of Ulm, Albert‐Einstein‐Allee 45, 89081 Ulm, Germany

2. Air Force Research Laboratories, 202 Avionics Circle, Dayton, OH 43240, USA

3. Department of Semiconductor Epitaxy, Otto‐von‐Guericke University Magdeburg, Postfach 4120, 39016 Magdeburg, Germany

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200390123

Reference13 articles.

1. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

2. Monte Carlo simulations of AlGaN/GaN heterojunction field-effect transistors (HFETs)

3. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

4. Novel Nitride Devices Based on Polarization Fields

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigating single-event effects in recess gate GaN/AlN p-channel HEMTs for radiation-hardened application;Journal of Computational Electronics;2024-08-19

2. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas;Scientific Reports;2016-03-29

3. Influence of polarization on the properties of GaN based FET structures;physica status solidi (c);2003-08-27

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