P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep23683.pdf
Reference36 articles.
1. Assad, F., Ren, Z., Vasileska, D., Datta, S. & Lundstrom, M. On the performance limits for Si MOSFETs a theoretical study. IEEE Trans. Electron Devices 47, 232–241 (2000).
2. Nakajima, A. et al. One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors. Proceedings of the 26th International Symposium: Power Semiconductor Devices & IC’s, Waikoloa, Hawaii. USA: IEEE. (2014, June 15–19).
3. Li, G., Wang, R., Verma, J., (Grace) Xing, H. & Jena, D. Ultra-thin body GaN-on-insulator nFETs and pFETs: Towards III-nitride complementary logic. Device Research Conference (DRC): 2012 70th Annual, University Park, TX. USA: IEEE. (2012, June 18–20).
4. Del Alamo, J. A. Nanometre-scale electronics with III-V compound semiconductors. Nature 479, 317–323 (2011).
5. Wang, B. et al. An efficient high-frequency drive circuit for GaN power HFETs. IEEE Trans. Ind. Appl. 45, 843–854 (2009).
Cited by 49 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analyzing E-Mode p-Channel GaN H-FETs Using an Analytic Physics-Based Compact Model;IEEE Transactions on Electron Devices;2024-03
2. Micro-structural and optical properties of diamond-like carbon films grown by magnetic field-assisted laser deposition;Acta Physica Sinica;2024
3. Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors;Applied Physics Letters;2023-12-25
4. Pressure control of the spin reorientation transition in the rare-earth orthoferrite YbFeO3;Physical Review B;2023-08-23
5. Align and Attend: Multimodal Summarization with Dual Contrastive Losses;2023 IEEE/CVF Conference on Computer Vision and Pattern Recognition (CVPR);2023-06
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3