One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors-Reference-Cited by-同舟云学术

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One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors

Published:2014-06 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
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Author:

Nakajima Akira,Nishizawa Sin-ichi,Ohashi Hiromichi,Yonezawa Hiroaki,Tsutsui Kazuo,Kakushima Kuniyuki,Wakabayashi Hitoshi,Iwai Hiroshi

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6848890/6855954/06856021.pdf?arnumber=6856021

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN-based E-mode p-FETs with polarization-doped p-type graded AlGaN channels;Journal of Physics D: Applied Physics;2024-06-27

2. Analyzing E-Mode p-Channel GaN H-FETs Using an Analytic Physics-Based Compact Model;IEEE Transactions on Electron Devices;2024-03

3. A robust Ni/Au process and mechanism for p-type ohmic contact applied to GaN p-FETs;Journal of Alloys and Compounds;2024-03

4. Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity;Applied Physics Letters;2023-08-28

5. High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiN_x gate insulator for high hole mobility;Journal of Semiconductors;2023-08-01

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