Analyzing E-Mode p-Channel GaN H-FETs Using an Analytic Physics-Based Compact Model
Author:
Affiliation:
1. Department of Electronics and Communication Engineering, Nanoelectronics Research and Development Laboratory, National Institute of Technology Srinagar, Srinagar, Jammu and Kashmir, India
Funder
Department of Science and Technology (DST)-Science and Engineering Research Board (SERB) under the Startup Research Grant vide
Institute Ph.D. Fellowship by the Ministry of Education, Government of India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/16/10457976/10380503.pdf?arnumber=10380503
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1. A Comprehensive Model for Gate Current in E-Mode p-GaN HEMTs;IEEE Transactions on Electron Devices;2024-03
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