Ultra-thin Body GaN-on-insulator nFETs and pFETs: Towards III-nitride complementary logic
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx5/6247596/6256924/06256962.pdf?arnumber=6256962
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface Potential Analysis of Dual Material Gate Silicon-Based Ferroelectric TFET for Biosensing Application;ECS Journal of Solid State Science and Technology;2024-01-01
2. High ${I}_{\text{ON}}$ and ${I}_{\text{ON}}$ /${I}_{\text{OFF}}$ Ratio Enhancement-Mode Buried ${p}$ -Channel GaN MOSFETs on ${p}$ -GaN Gate Power HEMT Platform;IEEE Electron Device Letters;2020-01
3. III-Nitride p-channel transistors;III-Nitride Electronic Devices;2019
4. Photocurrent and photoluminescence characteristics of AlGaAs/GaAs double-heterostructures with a pair of two-dimensional electron and hole channels;Journal of Applied Physics;2017-09-14
5. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas;Scientific Reports;2016-03-29
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