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Influence of polarization on the properties of GaN based FET structures

  • Published:2003-08-27 Issue:6 Volume: Page:1919-1939
  • ISSN:1610-1634
  • Container-title:physica status solidi (c)
  • language:en
  • Short-container-title:phys. stat. sol. (c)

Author:

Neuburger M.,Daumiller I.1,Kunze M.1,Seyboth M.2,Jenkins T.3,Van Nostrand J.4,Kohn E.1

Affiliation:

1. Department of Electron Devices & Circuits, University of Ulm, Albert‐Einstein‐Alle 45, 89081 Ulm, Germany

2. Department of Optoelectronics, University of Ulm, Albert‐Einstein‐Alle 45, 89081 Ulm, Germany

3. Air Force Research Laboratory, Sensors Directorate, Wright‐Patterson Air Force Base, 202 Avionics Circle, Dayton, Ohio 43240 USA

4. Air Force Research Laboratory, Materials & Manufacturing Directorate, Wright‐Patterson Air Force Base, 202 Avionics Circle, Ohio 45433 USA

Publisher

Wiley

Reference27 articles.

1. E.Kohn GAAS '99 Munich Germany Proceedings 1999 pp. 240–245.

2. C.Nguyen Electronics Letters vol 35 1999 pp. 1380–1382.

3. I.Daumiller IEEE Electron Device Letters vol 22 2001 pp. 62–64.

4. F.Bernadini Physical Review B vol 56 no. 16 1997.

5. M.Neuburger 26thWorkshop on Compound Semiconductor Devices and Integrated Circuits held in Europe Abstracts Chernogolovka Moscow Russia May 2002.

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