Effect of different layer structures on the RF performance of GaN HEMT devices
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ac1054/pdf
Reference38 articles.
1. AlGaN/GaN high electron mobility transistors with InGaN back-barriers;Palacios;IEEE Electron Device Lett.,2005
2. Optimization of AlGaN/GaN HEMTs for high frequency operation;Palacios,2006
3. High-power AlGaN/GaN HEMTs for Ka-band applications;Palacios;IEEE Electron Device Lett.,2005
4. Breakdown enhancement and current collapse suppression by high-resistivity GaN cap layer in normally-off AlGaN/GaN HEMTs;Hao;IEEE Electron Device Lett.,2017
5. Buffer traps in Fe-doped AlGaN/GaN HEMTs: investigation of the physical properties based on pulsed and transient measurements;Meneghini;IEEE Trans. Electron Devices,2014
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3. Efficacy of Π-Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs;IEEE Transactions on Electron Devices;2023-05
4. Off‐State Drain Leakage Current Mechanism in GaN High Electron Mobility Transistors from Thermal Storage Test;physica status solidi (a);2022-08-21
5. Study of “Thin Buffer” GaN on SiC HEMT and Effect of Bulk Traps on it;Silicon;2022-05-26
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