Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements-Reference-Cited by-同舟云学术

Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

Published:2014-12 Issue:12 Volume:61 Page:4070-4077
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Meneghini Matteo,Rossetto Isabella,Bisi Davide,Stocco Antonio,Chini Alessandro,Pantellini Alessio,Lanzieri Claudio,Nanni Antonio,Meneghesso Gaudenzio,Zanoni Enrico

Funder

European Defence Agency through the MANGA Project within the Italian Ministry of Defense and by ONR project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6965486/06960850.pdf?arnumber=6960850

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