Aging Reliability Compact Modeling of Trap Effects in Power GaN HEMTs-Reference-Cited by-同舟云学术

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Aging Reliability Compact Modeling of Trap Effects in Power GaN HEMTs

Published:2024-06 Issue:2 Volume:24 Page:313-322
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Ma Yanfeng¹^ORCID,Li Sheng¹^ORCID,Liu Mengli¹,Lu Weihao¹^ORCID,Li Mingfei¹,Liu Siyang¹^ORCID,Zhang Long¹^ORCID,Wei Jiaxing¹^ORCID,Yang Lanlan²^ORCID,Sun Weifeng¹^ORCID,Sun Jiaxin³^ORCID

Affiliation:

1. National ASIC System Engineer Research Center, Southeast University, Nanjing, China

2. National Center of Technology Innovation for EDA, Southeast University, Nanjing, China

3. Julin Technology Company Ltd., Shanghai, China

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation funded Project

Key Research Program of Jiangsu Province

undamental Research Funds for the Central Universities

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/7298/10566496/10497162.pdf?arnumber=10497162

Reference35 articles.

1. GaN-on-Si Power Technology: Devices and Applications

2. Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling

3. Design of GaN-Based Multilevel Switched Capacitor Converters—Benefits and Challenges

4. High-Efficiency and High-Density Single-Phase Dual-Mode Cascaded Buck–Boost Multilevel Transformerless PV Inverter With GaN AC Switches

5. Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

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