Off‐State Drain Leakage Current Mechanism in GaN High Electron Mobility Transistors from Thermal Storage Test-Reference-Cited by-同舟云学术

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Off‐State Drain Leakage Current Mechanism in GaN High Electron Mobility Transistors from Thermal Storage Test

Published:2022-08-21 Issue:21 Volume:219 Page:2200211
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Mukherjee Jayjit¹²,Chaubey Rupesh Kumar²,Rawal Dipendra S.²^ORCID,Dhaka Rajendra S.¹

Affiliation:

1. Department of Physics Indian Institute of Technology Delhi, Hauz Khas New Delhi 110016 India

2. Solid State Physics Laboratory DRDO Timarpur New Delhi 110054 India

Funder

Defence Research and Development Organisation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200211

Reference54 articles.

1. An insulator-lined silicon substrate-via technology with high aspect ratio

2. High-power AlGaN/GaN HEMTs for Ka-band applications

3. Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

4. High-Frequency PWM Buck Converters Using GaN-on-SiC HEMTs

5. GaN HEMT: Dominant Force in High-Frequency Solid-State Power Amplifiers

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reduction of off-state drain current in AlN/β−Ga2O3 HEMT by trap state engineering;Microelectronics Journal;2024-05

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