Study of “Thin Buffer” GaN on SiC HEMT and Effect of Bulk Traps on it-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Study of “Thin Buffer” GaN on SiC HEMT and Effect of Bulk Traps on it

Published:2022-05-26 Issue:18 Volume:14 Page:12505-12512
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Raychaudhuri Jagori,Mukherjee Jayjit,Bag Rajesh,Malik Amit,Kumar Sudhir,Rawal D. S.,Mishra Meena,Ghosh Santanu

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-022-01951-w.pdf

Reference46 articles.

1. Palacios T, Chakraborty A, Heikman S, Keller S, DenBaars S, Mishra U (2005) AlGaN/GaN high electron mobility transistors with InGaN back-barriers. IEEE Electron Device Lett 27(1):13–15. https://doi.org/10.1109/LED.2005.860882

2. Palacios T, Dora Y, Chakraborty A, Sanabria C, Keller S, DenBaars S, Mishra U (2006) Optimization of AlGaN/GaN HEMTs for high frequency operation. Wiley Online Library. https://doi.org/10.1002/pssa.200565384

3. Joshin K, Kikkawa T, Hayashi H, Maniwa T, Yokokawa S, Yokoyama M, Adachi N, Takikawa M (2003) A 174 W high-efficiency GaN HEMT power amplifier for W-CDMA base station applications. In: IEEE international Electron devices meeting 2003, pp. 12–6. https://doi.org/10.1109/IEDM.2003.1269444. IEEE

4. Adachi, N., Tateno, Y., Mizuno, S., Kawano, A., Nikaido, J., Sano, S.: High temperature operation of AlGaN/GaN HEMT. In: IEEE MTT-S International Microwave Symposium Digest, 2005., pp. 507–510 (2005). https://doi.org/10.1109/MWSYM.2005.1516642. IEEE

5. Cai Y, Cheng Z, Yang Z, Tang CW, Lau KM, Chen KJ (2007) Hightemperature operation of AlGaN/GaN HEMTs direct-coupled fet logic (DCFL) integrated circuits. IEEE electron device letters 28(5):328–331. https://doi.org/10.1109/LED.2007.895391

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermally stable radio frequency power and noise behaviors of AlGaN/GaN high electron mobility transistor without voltage-blocking buffer layer design;Journal of Vacuum Science & Technology B;2024-05-31

2. Evaluation of DC Performance of Buffer-Free AlGaN/GaN HEMT on SiC Relative to the Thickness of AlN Nucleation Layer;2023 14th International Renewable Energy Congress (IREC);2023-12-16

3. RF/Linearity figures of merit estimation for GaAs and GaN/SiC-based Nano-HEMTs;Micro and Nanostructures;2022-11

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3