High temperature operation of AlGaN/GaN HEMT-Reference-Cited by-同舟云学术

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High temperature operation of AlGaN/GaN HEMT

Published:2005 Issue: Volume: Page:
ISSN:
Container-title:IEEE MTT-S International Microwave Symposium Digest, 2005.
language:
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Author:

Adachi N.,Tateno Y.,Mizuno S.,Kawano A.,Nikaido J.,Sano S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/10171/32491/01516642.pdf?arnumber=1516642

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of RF performance of Ku-band GaN HEMT device and an in-depth analysis of short channel effects;Physica Scripta;2024-03-27

2. Comparison of GaN HEMT Thermal Resistance Measurement Method Between Uniform Pulse Method and Modulation Method;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

3. An ASM-HEMT for Large-Signal Modeling of GaN HEMTs in High-Temperature Applications;IEEE Journal of the Electron Devices Society;2023

4. Study of “Thin Buffer” GaN on SiC HEMT and Effect of Bulk Traps on it;Silicon;2022-05-26

5. X Band Class F Power Amplifier for Satellite Communication;Lecture Notes in Electrical Engineering;2021-12-14

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