Suitability of thin-GaN for AlGaN/GaN HEMT material and device
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
https://link.springer.com/content/pdf/10.1007/s10853-022-07017-x.pdf
Reference44 articles.
1. Shen L, Heikman S, Moran B et al (2001) AlGaN/AlN/GaN high-power microwave HEMT. IEEE Electron Device Lett 22:457–459. https://doi.org/10.1109/55.954910
2. Jones KA, Chow TP, Wraback M et al (2015) AlGaN devices and growth of device structures. J Mater Sci 50:3267–3307. https://doi.org/10.1007/s10853-015-8878-3
3. Li J, Fan ZY, Dahal R et al (2006) 200 nm deep ultraviolet photodetectors based on AlN. Appl Phys Lett 89:7–10. https://doi.org/10.1063/1.2397021
4. Wu YF, Saxler A, Moore M et al (2004) 30-W/mm GaN HEMTs by field plate optimization. IEEE Electron Device Lett 25:117–119. https://doi.org/10.1109/LED.2003.822667
5. Quay R, Schwantuschke D, Ture E et al (2018) High-power microwave GaN/AlGaN HEMTs and MMICs on SiC and silicon substrates for modern radio communication. Phys Status Solidi Appl Mater Sci 215:1–7. https://doi.org/10.1002/pssa.201700655
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