High-Power Microwave GaN/AlGaN HEMTs and MMICs on SiC and Silicon Substrates for Modern Radio Communication-Reference-Cited by-同舟云学术

High-Power Microwave GaN/AlGaN HEMTs and MMICs on SiC and Silicon Substrates for Modern Radio Communication

Published:2018-01-08 Issue:9 Volume:215 Page:1700655
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Quay Rüdiger¹^ORCID,Schwantuschke Dirk¹,Ture Erdin¹,van Raay Friedbert¹,Friesicke Christian¹,Krause Sebastian¹,Müller Stefan¹,Breuer Steffen²,Godejohann Birte¹,Brückner Peter¹

Affiliation:

1. Fraunhofer IAF; Tullastr. 72 79108 Freiburg Germany

2. Fraunhofer HHI; Einsteinufer 37 10587 Berlin Germany

Funder

Ministry of Defence

European Space Agency

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. J. Palmour https://cs-international.net/csinternational2017

2. R. Reiner P. Waltereit B. Weiss S. Mönch M. Wespel S. Müller R. Quay O. Ambacher

3. A. Lidow

4. W. Nagy S. Singhal R. Borges J. W. Johnson J. D. Brown R. Therrien A. Chaudhari A. W. Hanson J. Riddle S. Booth P. Rajagopal E. Piner K. Linthicum

5. http://www.businesswire.com/news/home/20150908005618/en/

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advance understanding of the synthesis process, special performance, and multidiscipline applications of SiC nanowires and the constructed composites;Journal of Materials Research and Technology;2024-03

2. Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications;Micromachines;2023-04-25

3. Investigation of carrier gas on morphological and structural characteristics of AlGaN/GaN HEMT;Materials Research Bulletin;2022-09

4. Suitability of thin-GaN for AlGaN/GaN HEMT material and device;Journal of Materials Science;2022-03

5. Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines;Applied Sciences;2021-09-28