Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications
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Published:2023-04-25
Issue:5
Volume:14
Page:931
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ISSN:2072-666X
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Container-title:Micromachines
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language:en
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Short-container-title:Micromachines
Author:
Lee Ming-Wen12ORCID, Lin Yueh-Chin1, Hsu Heng-Tung1ORCID, Gamiz Francisco2ORCID, Chang Edward-Yi1
Affiliation:
1. International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu City 30010, Taiwan 2. Department of Electronics and Computer Technology, University of Granada, 18014 Granada, Spain
Abstract
In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with etched-fin gate structures fabricated to improve device linearity for Ka-band application are reported. Within the proposed study of planar, one-etched-fin, four-etched-fin, and nine-etched-fin devices, which have 50-μm, 25-μm, 10-μm, and 5-μm partial gate widths, respectively, the four-etched-fin gate AlGaN/GaN HEMT devices have demonstrated optimized device linearity with respect to the extrinsic transconductance (Gm) value, the output third order intercept point (OIP3), and the third-order intermodulation output power (IMD3) level. The IMD3 is improved by 7 dB at 30 GHz for the 4 × 50 μm HEMT device. The OIP3 is found to reach a maximum value of 36.43 dBm with the four-etched-fin device, which exhibits high potential for the advancement of wireless power amplifier components for Ka band applications.
Funder
Center for the Semiconductor Technology Research the Ministry of Science and Technology, Taiwan
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
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