Core–shell GaN/AlGaN nanowires grown by selective area epitaxy-Reference-Cited by-同舟云学术

Core–shell GaN/AlGaN nanowires grown by selective area epitaxy

Published:2023 Issue:4 Volume:8 Page:530-542
ISSN:2055-6756
Container-title:Nanoscale Horizons
language:en
Short-container-title:Nanoscale Horiz.

Author:

Adhikari Sonachand¹²^ORCID,Kremer Felipe³,Lysevych Mykhaylo⁴^ORCID,Jagadish Chennupati¹⁵,Tan Hark Hoe¹⁵

Affiliation:

1. Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2600, Australia

2. Council of Scientific & Industrial Research – Central Electronics Engineering Research Institute, Pilani, Rajasthan 333031, India

3. Centre for Advanced Microscopy, The Australian National University, Canberra, Australian Capital Territory 2600, Australia

4. Australian National Fabrication Facility ACT Node, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2600, Australia

5. Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2600, Australia

Abstract

SEM image of an array of GaN/AlGaN core–shell nanowires and cathodoluminescence from the AlGaN MQWs incorporated in the nanowire sidewalls (pseudo-colored).

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NH/D2NH00500J

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4. Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

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