Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates-Reference-Cited by-同舟云学术

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Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

Published:2015-06-08 Issue:23 Volume:106 Page:232101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bryan Zachary¹,Bryan Isaac¹,Mita Seiji²,Tweedie James³,Sitar Zlatko¹,Collazo Ramón¹

Affiliation:

1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA

2. HexaTech, Inc., 991 Aviation Pkwy., Suite 800, Morrisville, North Carolina 27560, USA

3. Adroit Materials, 2054 Kildaire Farm Rd., Suite 205, Cary, North Carolina 27518, USA

Funder

National Science Foundation (NSF)

Army Research Office (ARO)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4922385

Reference31 articles.

1. The conduction band structure and deep levels in Ga1-xAlxAs alloys from a high-pressure experiment

2. The Blue Laser Diode

3. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

4. Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure

5. High Output Power from 260 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance

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2. Estimation of Junction Temperature in Single 228 nm‐Band AlGaN Far‐Ultraviolet‐C Light‐Emitting Diode on c‐Sapphire Having 1.8 mW Power and 0.32% External Quantum Efficiency;physica status solidi (a);2024-05-23

3. Effect of Extended Defects on AlGaN Quantum Dots for Electron-Pumped Ultraviolet Emitters;ACS Nano;2024-04-23

4. Photoluminescence Excitation Spectroscopy of Stimulated Emission from AlGaN‐Based Multiple Quantum Wells with an Emission Wavelength Around 280 nm;physica status solidi (b);2024-04-07

5. High‐Temperature Annealing of Si‐Doped AlGaN;physica status solidi (a);2024-01-31

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