Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures-Reference-Cited by-同舟云学术

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures

Published:2022-11-03 Issue: Volume: Page:2200496
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Chen Ding-Yuan¹^ORCID,Wen Kai-Hsin¹,Thorsell Mattias²^ORCID,Lorenzini Martino¹,Hjelmgren Hans²,Chen Jr-Tai¹^ORCID,Rorsman Niklas²^ORCID

Affiliation:

1. Department of Research and Development SweGaN AB Olaus Magnus väg 48A 583 30 Linköping Sweden

2. Microwave Electronics Laboratory Department of Microtechnology and Nanoscience Chalmers University of Technology Chalmersplatsen 4 412 96 Göteborg Sweden

Funder

VINNOVA

HORIZON EUROPE European Research Council

Stiftelsen för Strategisk Forskning

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200496

Reference47 articles.

1. Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

2. Enhanced effect of polarization on electron transport properties in AlGaN/GaN double-heterostructure field-effect transistors

3. A.Chini V.Di Lecce F.Soci D.Bisi A.Stocco M.Meneghini G.Meneghesso E.Zanoni A.Gasparotto in2012 IEEE Inter. Reliability Physics Symp. (IRPS) IEEE Piscataway NJ2012 pp.CD. 2.1–CD. 2.4.

4. GaN-on-Si Power Technology: Devices and Applications

5. On the performance of GaN‐on‐Silicon, Silicon‐Carbide, and Diamond substrates

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A computational analysis of the impact of thin undoped channels in surface-related current collapse of AlGaN/GaN HEMTs;Semiconductor Science and Technology;2024-08-20

2. A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs;ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC);2023-09-11

3. Efficacy of back barrier engineered Π-gate InAlN/GaN high electron mobility transistors for high-power applications;Journal of Physics D: Applied Physics;2023-07-12

4. Low Trapping Effects and High Blocking Voltage in Sub-Micron-Thick AlN/GaN Millimeter-Wave Transistors Grown by MBE on Silicon Substrate;Electronics;2023-07-06

5. Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5 GHz;physica status solidi (a);2023-06