Enhanced effect of polarization on electron transport properties in AlGaN/GaN double-heterostructure field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126542
Reference20 articles.
1. Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors
2. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
3. High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors
4. AlGaN/GaN HEMTs grown on SiC substrates
5. High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor
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