On the performance of GaN‐on‐Silicon, Silicon‐Carbide, and Diamond substrates
Author:
Affiliation:
1. Department of Electrical EngineeringUniversity of Sharjah Sharjah United Arab Emirates
2. Department of Electronics and Communication EngineeringKarunya Institute of Technology and Sciences Coimbatore Tamil Nadu India
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/mmce.22196
Reference46 articles.
1. A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability
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4. Reliable noise modeling of GaN HEMTs for designing low‐noise amplifiers
5. Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application
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