Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates-Reference-Cited by-同舟云学术

Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates

Author:

Gribisch Philipp¹^ORCID,Carrascon Rosalia Delgado²^ORCID,Darakchieva Vanya³^ORCID,Lind Erik¹^ORCID

Affiliation:

1. Department of Electrical and Information Technology and NanoLund, Lund University, Lund, Sweden

2. Department of Physics, Chemistry and Biology and the Center for III-Nitride Technology, C3NiT-Janzén, Linköping University, Linköping, Sweden

3. NanoLund and the Physics Department, Lund University, Lund, Sweden

Funder

Swedish Governmental Agency for Innovation Systems (VINNOVA) through the Competence Center Program

Swedish Research Council

Swedish Foundation for Strategic Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

Reference30 articles.

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