Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies-Reference-Cited by-同舟云学术

Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies

Author:

Delgado Carrascon Rosalia¹²^ORCID,Richter Steffen¹²³⁴,Nawaz Muhammad¹²⁵,Paskov Plamen P.¹²,Darakchieva Vanya¹²³⁴

Affiliation:

1. Department of Physics, Chemistry and Biology, Linköping University, 581 83Linköping, Sweden

2. Center for III-Nitride Technology, C3NiT-Janzén, Linköping University, 581 83Linköping, Sweden

3. THz Materials Analysis Center (TheMAC), Linköping University, 581 83Linköping, Sweden

4. Solid State Physics and Nanolund, Lund University, 22100Lund, Sweden

5. Hitachi Energy, Forskargrand 7, 722 26Vaesteras, Sweden

Funder

Chalmers Tekniska H?gskola

Link?pings Universitet

VINNOVA

Saab

Telefonaktiebolaget LM Ericsson

Sveriges Regering

Stiftelsen f?r Strategisk Forskning

Volvo Cars

Epiluvac

Gotmic

aUMS

On Semiconductor

Hitachi Energy Research

Hexagem

Swedish Research Council VR

SweGaN

FMV

NanoLund

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

Reference54 articles.

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