Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone-Reference-Cited by-同舟云学术

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Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone

Published:2024-05 Issue: Volume:147 Page:106158
ISSN:1879-2391
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Jebalin I.V.Binola K,Franklin S. Angen,G Gifta,P Prajoon,Nirmal D.^ORCID

Publisher

Elsevier BV

Reference27 articles.

1. High current and linearity AlGaN/GaN/-Graded-AlGaN:Si-doped/GaN heterostructure for low voltage power amplifier application;Yu;IEEE Electron. Device Lett.,2023

2. Barrier lowering-induced capacitance increase of short-channel power p-GaN HEMTs at high temperature;Xin;IEEE Trans. Electron. Dev.,2022

3. AlGaN/GaN-Based multimetal gated high-electron-mobility transistor with improved linearity;Azad;IEEE Trans. Electron. Dev.,2023

4. Bias-dependent electron velocity extracted from N-polar GaN deep recess HEMTs;Romanczyk;IEEE Trans. Electron. Dev.,2020

5. A study on the optimized ohmic contact process of AlGaN/GaN-Si MIS-HEMTs;Guan;IEEE Access,2021

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